افزایش بازده سلول خورشیدی GaAs مبتنی بر ساختار p-i-n باند میانی توسط نقاط کوانتومی InAs در ناحیه ذاتی آن

[1]      داودی، حسین؛ عباسیان، کریم؛ "طراحی سلول خورشیدی میان باندی مبتنی برنانوذرات نقطه کوانتومی"، پنجمین کنفرانس انرژیهای تجدیدپذیر، پاک و کارآمد، 15 اسفند 1392 .

[2]      J. Chen, C. Li, D. W. Zhao, W. Lei, Y. Zhang, M. T. Cole, D. P. Chu, “A quantum dot sensitized solar cell based on vertically aligned carbon nanotube templated ZnO arrays”, Electrochem. Commun. 12, 1432-1435, 2010.

[3]      A.E. Becquerel, C. R. Acad. Sci. 9 561, 1839.

[4]     Micha, Weiner, E., Jakomin, R.,“InAs quantum dots on GaAs for intermediate band solar cells”, IEEE, 2015.

[5]      Marti, Antonio, Luque, Antonio, “Intermediate band solar cells”, Opto Electronics and Communications Conference, 2009. OECC 2009. 14th, p. 1-2, 2009.

[6]      K. Taretto, U. Rau, J. H. Werner, Appl. Phys. A, 77, 865-871 (2003) and K. Taretto, U. Rau, J. H. Werner, Appl. Phys. A, 86, 151, 2007.

[7]      V. Aroutiounian, S. Petrosyan,a) and A. Khachatryan, “Quantum dot solar cells”, JOURNAL OF APPLIED PHYSICS VOLUME 89, NUMBER 4 15 FEBRUARY 2001.

[8]      Luque, A. and Martí, A.“Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels”, Phys. Rev. Lett., Vol.78, No. 26, p.5014, 1997.

[9]      Luque, Antonio, Marti, A., “Recent Progress inIntermediate Band Solar Cells”, Photovoltaic Energy Conversion, Conference IEEE 4th World Conference on, p. 49-52, 2006.

[10]      K. W. J. Barnham and G. Duggan, J. Appl. Phys. 67, 3490 ~1990.

[11]      Y. Okada,1, N. J. Ekins, “Intermediate band solar cells: Recent progress and future directions”, APPLIED PHYSICS REVIEWS 2, 021302, 2015.

[12]      M. Paxman et al., J. Appl. Phys. 74, 614 ~1993.

[13]      M. Y. Levy, C. Honsberg, A. Marti, and A. Luque, “Quantum Dot Intermediate Band Solar Cell Material Systems With Negligible Valence Band Offsets”,Proceedings of the 31st IEEE Photovoltaic Specialists Conference _IEEE, New Jerseypp.90–93. , 2005.

[14]      A. Das, M. M. Rahman, M. A. Matin, N. Amin, “Highly Efficient Quantum Dot Intermedaite Band Solar Cell (QDIBSC) With GaAs”, Mechanical Engineering Research Journal, 90−95, 2013.

[15]      Xiaoliang Zhang, Carl Hägglundb, Erik M. J. Johansson, "Highly efficient, transparent and stable semitransparent colloidal quantum dot solar cells:a combined numerical modeling and experimental approach ",Energy & Environmental Science,Issue 1, 2017.

[16]      D. E. Aspnes and A. A. Studna. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 ev. Phys. Rev. B, 27: 985–1009, Jan 1983.

[17]      H. R. Philipp and H. Ehrenreich. Optical properties of semiconductors. Phys. Rev., 129:1550–1560, Feb 1963.

[18]      A. Le Donne, A. Scaccabarozzi, S. Tombolato, S. Binetti, M. Acciarri, A. Abbotto, Solar photovoltaics: a review, Reviews in Advanced Science and Engineering 2 (2), - IN PRESS, June 2013.

[19]      Uddin,N., Md.Motiur Rahman, Ahmed, T.,& Atiqulislam, “Performance Analysis of Quantum Dot Intermediate Band Solar Cell (QD IBSC)”, Global Journal of Researches in Engineering Electrical and Electronics Engineerin Volume 15 Issue 1 USA, 2015.

[20]      M. B.E.A.Saleh, Fundamentals of photonics., boston: Wiley, 2007.

[21]      F. K. Tutu, P. Lam, J. Wu, N. Miyashita, Y. Okada, K.-H. Lee, N. J. Ekins-Daukes, J. Wilson, and H. Liu, ‘InAs/GaAs quantum dot solar cell with an AlAs cap layer’, Appl. Phys. Lett., vol. 102, no. 16, p. 163907, Apr. 2013.

[22]      D. Pandaa, A. Balgarkashia, S. Sardar," Comparison of InAs/GaAs and InGaAs/GaAs Quantum Dot Solar Cells and Effect of Post-Growth Annealing on Their Optical properties", IEEE 2016.

[23]      Neil Scott Beattie, Patrick See, Guillaume Zoppi,"Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells", ACS Photonics 2017.

[24]      A. Creti, V. Tasco, A. Cola,"Role of charge separation on two-step two photon absorption in InAs/GaAs quantum dot intermediate band solar cells",Appl. Phys. Lett. 108, 2016.

[25]      Guodan Wei, Stephen R. Forrest,” Intermediate-Band Solar Cells Employing Quantum Dots Embedded in an Energy Fence Barrier”, NANO LETTERS 2007.

[26]      YANG Xiao-Guang, YANG Tao,” Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots”, CHIN. PHYS. LETT. Vol. 28, No. 3, 2011.

[27]      Tomah Sogabe, Yasushi Shoji,” Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules”, SCIENTIFIC REPORTS 2014.

[28]      Ali Imran, Jianliang Jiang,”Efficiency enhancement through flat intermediate band in quantum dot solar cell”, science direct 2018.

[29]      Injamam Ui Islam Chowdhury, Jith sarker,”Performance analysis of high efficiency Inx Ga1-x N/GaN intermediate band quantum dot solar cell”, science direct 2018.

[30]      Hiroji Hosokawa, Ryo Tamaki, ”Solution-processed intermediate-band solar cells with lead sulfide quantum dots and lead halide perovskites”, nature 2019.

[31]      AR Tumpa, E Sarker, S Anjum, N Sultana, Analyze the effect of window layer (AlAs) for increasing the efficiency of GaAs based solar cell, ajer Volume-4, Issue-7, pp-304-315, 2015.

[32]      N. Matveev, Optics. Mir Publishers. Moscow, 1988.