تاثیر موقعیت نقص دو حفره ای بر عملکرد ترانزیستورهای اثر میدانی تونلی نانو نوار فسفرینی با لبه زیگزاگ

[1] A.R. Urade, I. Lahiri, and K.S. Suresh, "Graphene properties, synthesis and applications: a review," Jom, vol. 75, no. 3, pp.614-630. 2023.

[2] Z. Hamzavi-Zarghani1,and A. Yahaghi, "Using Graphene for Tunable Scattering Manipulation of
Dielectric Cylinder ,"Tabriz Journal of Electrical Engineering, vol. 49, no. 4, pp.1570-1576, 2019.

[3] C. Grazianetti, E. Cinquanta, and A. Molle, "Two-dimensional silicon: the advent of silicone," 2D Materials, vol. 3, no.1, p.012001. 2016.

[4] J. Sun, X. Li, W. Guo, M. Zhao, X. Fan, Y. Dong, C. Xu, J. Deng, and Y. Fu, "Synthesis methods of two-dimensional MoS2: A brief review," Crystals, vol. 7, no. 7, p.198. 2017.

[5] S. Roy, X. Zhang, A.B. Puthirath, A. Meiyazhagan, S. Bhattacharyya, M.M. Rahman, G. Babu, S. Susarla, S.K. Saju, M.K. Tran, and L.M. Sassi, "Structure, properties and applications of two‐dimensional hexagonal boron nitride," Advanced Materials, vol. 33, no.44, p.2101589, 2021.

[6] J. Wang, and S. Wang, "A critical review on graphitic carbon nitride (g-C3N4)-based materials: Preparation, modification and environmental application," Coordination Chemistry Reviews, 453, p.214338. 2022.

[7] W. Zhang, X. Zhang, L.K. Ono, Y. Qi, and H. Oughaddou, "Recent advances in phosphorene: structure, synthesis, and properties," Small, vol. 20, no.4, p.2303115. 2024.

[8] L. Ding, P. Shao, Y. Yin, and F. Ding," Synthesis of 2D Phosphorene: Current Status and Challenges," Advanced Functional Materials, p.2316612, 2024.

[9] M.B. Nasrollahnejad, and P. Keshavarzi, "Inverse Stone Throwers Wales defect and enhancing ION/IOFF ratio and subthreshold swing of GNR transistors," The European Physical Journal Applied Physics, vol. 86, no.2, p.20202.2019.

[10] H. Owlia, and P. Keshavarzi, "Locally defect-engineered graphene nanoribbon field-effect transistor." IEEE Transactions on Electron Devices, vol. 63, no.9, pp.3769-3775. 2016.

[11] H. Owlia, P. Keshavarzi, and M.B. Nasrollahnejad, "Effects of Stone-Wales defect position in graphene nanoribbon field-effect transistor," J. Nano Electr. Phys. Vol.9,no. 6, p. 06008, 2017.

[12] H. Owlia, "Effects of passivation type on electrical transport of a defect-engineered graphene nanoribbon FET," Journal of Computational Electronics, vol. 22, no. 2, pp.626-633, 2023.

[13] M.B. Nasrollahnejad, and P. Keshavarzi, "Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs," Journal of Central South University, vol. 26, no.11, pp.2943-2952, 2019.

[14] J. Gao, J.,  Zhang, H. Liu, Q. Zhang, and J. Zhao, "Structures, mobilities, electronic and magnetic properties of point defects in silicone," Nanoscale, vol. 5, no. 20, pp.9785-9792, 2013.

[15] F. Wan, X. Wang, Y. Guo, J. Zhang, Z. Wen, and Y. Li, "Role of line defect in the bandgap and transport properties of silicene nanoribbons," Physical Review B, vol.104, no.19, p.195413,2021.

[16] W. Hu, and J. Yang, "Defects in phosphorene," The Journal of Physical Chemistry C, vol. 119, no. 35, pp.20474-20480, 2015.

[17] A. H. Bayani,D. Dideban, and N. Moezi, "Reducing Ambipolar Current in Germanene Nanoribbon Tunneling Field Effect Transistor (GeNR-TFET) using Gate-Drain Overlap and Decreasing Doping Density in the Drain Side," Tabriz Journal of Electrical Engineering, vol. 49, no. 4,pp.1521532, 2019.

[18] H. Owlia, and M.B. Nasrollahnejad, "Exploring performance characteristics via edge configuration in black phosphorene TFETs," International Journal of Modern Physics B, p.2540048, 2024.

[19] H. Mamori, A. Al Shami, L. Attou, A. El Kenz, A. Benyoussef, A. Taleb, A. El Fatimy, and O. Mounkachi, “Layer engineering in optoelectronic and photonic properties of single and few layer phosphorene using first-principles calculations,” RSC advances, Vol. 14, No. 1, pp. 608–615, 2024.

[20] T.D. Kühne, M. Iannuzzi, M. Del Ben, V.V. Rybkin, P. Seewald, F. Stein, T. Laino, R.Z. Khaliullin, O. Schütt, F. Schiffmann, and D. Golze, "CP2K: An electronic structure and molecular dynamics software package-Quickstep: Efficient and accurate electronic structure calculations," The Journal of Chemical Physics, vol. 152, no.19, 2020.

[21] G. Murdachaew, CJ. Mundy, GK. Schenter, T . Laino, and J. Hutter, "Semiempirical Self-Consistent Polarization Description of Bulk Water, the Liquid-Vapor Interface, and Cubic Ice," J Phys Chem A , vol.115, no. 23, pp. 6046–6053, 2011.

[22] The CP2K simulation package, Available online at: https://www.cp2k.org. Accessed 10 February 2025.

[23] RG. Parr, W. Yang, "Density-Functional Theory of Atoms and Molecules," Oxford University Press, Oxford, 1995.

[24] QuantumATK (ATK-VNL 2016), Available online at: https://www.synopsys.com/manufacturing/quantumatk.html. Accessed 10 February 2025.

[25] H. Owlia, and P. Keshavarzi, "A bilayer graphene nanoribbon field-effect transistor with a dual-material gate," Materials Science in Semiconductor Processing, 39, pp.636-640, 2015.

[26] H. Owlia, and R. Fazli, "Bilayer graphene nanoribbon field-effect transistor with electrically embedded source-side gate," Superlattices and Microstructures, vol. 142, p.106525, 2020.

[27] H. Owlia, M.B. Nasrollahnejad, and R. Fazli, "Phosphorene nanoribbon field effect transistor with a dual material gate," Engineering Research Express, vol.6 , no. 2, pp. 025362(1-10), 2024.

[28] H. Shamloo, and A.Y. Goharrizi, "Performance study of tunneling field effect transistors based on the graphene and phosphorene nanoribbons," Micro and Nanostructures, vol. 169, p.207336, 2022.

[29] M.K. Anvarifard, Z. Ramezani, and S.A. Ghoreishi, "A ballistic transport nanodevice based on graphene nanoribbon FET by enhanced productivity for both low-voltage and radio-frequency scopes," ECS Journal of Solid State Science and Technology, vol. 11, no.6, p.061008, 2022.

[30] S.S. Ghoreishi, and R. Yousefi, "A computational study of a novel graphene nanoribbon field effect transistor," International Journal of Modern Physics B, vol. 31, no. 9, p.1750056, 2017.

[31] G. Liang, N. Neophytou, M.S. Lundstrom, and D.E. Nikonov, "Computational study of double-gate graphene nano-ribbon transistors," Journal of Computational Electronics, vol. 7, pp.394-397, 2008.

[32] M.A., Hasan, S.S. Nishat, M. Hossain, and S. Islam, "Influence of Device Parameters on Performance of Ultra-Scaled Graphene Nanoribbon Field Effect Transistor," ECS Journal of Solid State Science and Technology, vol. 9, no. 12, p.121006, 2020.

[33] A. Naderi," Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region," Superlattices and Microstructures, vol. 89, pp.170-178, 2016.

[34]  E. Suhendi, L. Hasanah, D. Rusdiana, F.A. Noor, and N. Kurniasih, "Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation," Journal of Semiconductors, vol. 40, no. 6, p.062002, 2019.

[35] H. Shamloo, and A.Y. Goharrizi, "Performance study of tunneling field effect transistors based on the graphene and phosphorene nanoribbons," Micro and Nanostructures, vol. 169, p.207336, 2022.

[36] Poljak, M. and Suligoj, T., " The potential of phosphorene nanoribbons as channel material for ultrascaled transistors," IEEE transactions on electron devices, 65(1), pp.290-294, 2017.

[37] Pantis-Simut, C.A., Preda, A.T., Filipoiu, N., Allosh, A. and Nemnes, G.A.,"Electric-field control in phosphorene-based heterostructures," Nanomaterials, vol. 12, no. 20, p.3650, 2022.

[38] H. Li, J. Tie, J. Li, M. Ye, H. Zhang, X. Zhang, Y. Pan, Y. Wang, R. Quhe, F. Pan, and J. Lu, "High-performance sub-10-nm monolayer black phosphorene tunneling transistors," Nano Research, vol. 11, pp. 2658-2668, 2018.

[39] H. Li, B. Shi, Y. Pan, J. Li, L. Xu, L. Xu, Z. Zhang, F. Pan, and J. Lu, "Sub-5 nm monolayer black phosphorene tunneling transistors," Nanotechnology, vol. 29, no. 48, p. 485202, 2018.

[40] A. Khodabakhsh, A. Amini, and A. Afzal, "Phosphorus-based heterojunction tunnel field-effect transistors: from atomic insights to circuit renovations," Physical Chemistry Chemical Physics, vol. 27, no. 3, pp. 1459-1472, 2025.

[41] K. Ganapathi, Y. Yoon, M. Lundstrom, and S. Salahuddin, “Ballistic IV characteristics of short-channel graphene field-effect transistors: Analysis and optimization for analog and RF applications,” IEEE Transactions on Electron Devices, Vol. 60, No. 3, pp. 958–964, 2013.