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An FVF-Based Gm-Enhanced fully balanced Preamplifier | ||
مجله مهندسی برق دانشگاه تبریز | ||
مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 01 آبان 1400 | ||
نوع مقاله: علمی-پژوهشی | ||
شناسه دیجیتال (DOI): 10.22034/tjee.2021.16717 | ||
نویسندگان | ||
حسن فرجی بگتاش ![]() | ||
1استاد/دانشگاه سهند تبریز | ||
2Iranian Space Research Center (ISRC), Tehran, Iran | ||
چکیده | ||
A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage. The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively | ||
کلیدواژهها | ||
FVF؛ OTA؛ Low Power؛ Low Voltage؛ CCII؛ preamplifier | ||
مراجع | ||
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آمار تعداد مشاهده مقاله: 9 |