تقویت‌کننده الکترونیکی مقاومت انتقالی برای شبکه‌های مخابرات نوری با ساختار جدید مبتنی بر پسخور فعال ولتاژ جریان

[1] M. Rakideh, M. Seifouri and P. Amiri, “A folded cascode-based broadband transimpedance amplifier for optical communication,” Microelectronics Journal, vol. 54, no. c,  pp. 1-8, 2016.

[2] S. M. R. Hasan, “Design of a low power 3.5-GHz broad-band CMOS transimpedance amplifier for optical transceivers,” IEEE Transactions on Circuits and Systems I, vol. 52, no. 6, pp. 1061-1072, 2005.

[3] M. Seifouri, P. Amiri and M. rakide, “Design of broadband transimpedance amplifier for optical communication systems,” Microelectronics Journal, vol. 45, no.8, pp. 679-684, 2015.

[4] J. Kim and J. F. Buckwalter, “Bandwidth enhancement with low group-delay variation for a 40-Gb/s transimpedance amplifier,” IEEE Transactions on Circuits and Systems I, vol. 57, no. 8, pp. 1964-1972, 2010.

[5] امیری، صیفوری، آفرین و هدایتی‌پور، «طراحی پیش تقویت‌کننده RGC کم‌نویز مدار مجتمع CMOS با پهنای باند GHz20 و بهره dBΩ60»، مجله مهندسی برق دانشگاه تبریز، جلد 46 شماره 2، صفحات 15-23، 1395

[6] D. Chen, S. Yeh, X. Shi, M. A. Do, C. C. Boon and W. M. Lim, “Cross-coupled current conveyor based CMOS transimpedance amplifier for broadband data transmission,” IEEE Transaction on Very Large Scale Integration (VLSI) Systems, vol. 21, no. 8, pp. 15-16-1525, 2013.

[7] B. Razavi, Integrated Circuit for Optical Communications, Second Edition, Hoboken, New Jersey: John Wiley & Sons, Inc., 2012.

[8] S. S. Mohan, M. M. Hershenson, S. P. Boyed and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE Journal of Solid-State Circuits, vol. 35, no. 3, pp. 346-355, 2000.

[9] B. Analui and A. Hajimiri,, “Bandwidth enhancement for transimpedance amplifiers,” IEEE Journal of Solid-State Circuits, vol. 39, no. 8 pp. 1263-1270, 2004.

[10] S. Galal and B. Razavi, “40-Gb/s amplifier and ESD protection circuit in 0,18µm CMOS technology,” IEEE Journal of Solid-State Circuits, vol. 39, no. 6, pp. 2389-2396, 2004.

[11] D. J. Jin and S. H. Hsu,, “A 40-Gb/s transimpedance amplifier in 0.18 µm CMOS technology,” IEEE Journal of Solid-State Circuits, vol. 43, no.6,  pp. 1449-1457, 2008.

[12] C. F. Liu and S. I. LIU, “A 40-Gb/s transimpedance-AGC amplifier and CDR circuit for broadband data receivers in 90-nm CMOS technology," IEEE Journal of Solid-State Circuits, vol. 43, no.3, pp. 642-665, 2008.

[13] M. H. Taghavi, L. Belostotski, J.W Haslett and P.Ahmadi,“10-Gb/s 0.13-µm CMOS inductorless modified-RGC transimpedance amplifier,” IEEE Transaction on Circuits and Systems I,vol. 62, no. 8, pp. 1971-1980, 2015.

[14] P. Andre and S. Jacobus, “Design of a high gain and power efficient optical reciever front-end in 0.13µm RF CMOS technology for 10 Gbps applications” Microwave and Optical Technology Letters, vol. 58, no. 6, pp. 1499-1504, 2016.