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An heuristic method for solving an inverse problem in semiconductors governed by a nonlinear coupled system | ||
| Computational Methods for Differential Equations | ||
| مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 07 بهمن 1403 اصل مقاله (1.12 M) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22034/cmde.2025.62043.2708 | ||
| نویسندگان | ||
| Youness El Yazidi* 1؛ Abdellatif Ellabib2 | ||
| 1Research Laboratory in Numerical Analysis and Nonlinear Analysis (LaR2A) Department of Mathematics, Faculty of Sciences, University Abdelmalek Essaadi, BP 2121 M'Hannech II 93030 Tetouan, Morocco. | ||
| 2Laboratory of Applied Mathematics and Computer Science, Faculty of Science and Technology, Cady Ayyad University, Marrakesh, Morocco. | ||
| چکیده | ||
| In this work, we utilize a coupled system to describe the carrier density in the Metal-Semiconductor Field-Effect Transistor (MESFET) device. To identify the depletion layer in this semiconductor, we define a cost functional $J$, and then use it to derive the shape optimization problem, for which we prove the existence of a solution. We develop an approach to solve this optimization problem based on the finite element method with particle swarm optimization. Finally, we present several numerical examples to demonstrate the robustness of our proposed algorithm in identifying the depletion layer in the MESFET device. | ||
| کلیدواژهها | ||
| Free boundary problem؛ Shape optimization؛ Finite element method؛ Particle swarm optimization | ||
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آمار تعداد مشاهده مقاله: 202 تعداد دریافت فایل اصل مقاله: 174 |
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