کمپرسورهای MTJ/CMOS 5-2 مقاوم و پرسرعت

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[5] F. Razi, M. H. Moaiyeri, R. Rajaei, and S. Mohammadi, “A variation-aware ternary spin-Hall assisted STT-RAM based on hybrid MTJ/GAA-CNTFET logic”, IEEE Transactions on Nanotechnology, vol. 18, pp. 598-605, 2019.

[6] A. Amirany and R. Rajaei, “Nonvolatile, spin-based, and low-power inexact full adder circuits for computing-in-memory image processing”, Spin, vol. 9, no. 03, p. 1950013, 2019.

[7] A. Zarei and F. Safaei, “Power and area-efficient design of VCMA-MRAM based full-adder using approximate computing for IoT applications”, Microelectronics journal, vol. 82, pp. 62-70, 2018.

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[9] K. C. Chun, H. Zhao, J. D. Harms, T.-H. Kim, J.-P. Wang, and C. H. Kim, “A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory”, IEEE journal of solid-state circuits, vol. 48, no. 2, pp. 598-610, 2012.

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[12] S. Jain, A. Ranjan, K. Roy, and A. Raghunathan, “Computing in memory with spin-transfer torque magnetic RAM”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 26, no. 3, pp. 470-483, 2017.

[13] J. Sun, X. Zhao, and Y. Wang, “A Three Input Look-Up-Table Design Based on Memristor-CMOS”, in Bio-inspired Computing: Theories and Applications: 13th International Conference, BIC-TA November 2–4, 2018, Beijing, China, pp. 275-286.

[14] D. Cho, K. Kim, and C. Yoo, “A non-volatile ternary content-addressable memory cell for low-power and variation-toleration operation”, IEEE transactions on magnetics, vol. 54, no.2, pp. 1-3, 2017.

[15] A. A. Javadi, M. Morsali, and M. H. Moaiyeri, “Magnetic nonvolatile flip-flops with spin-Hall assistance for power gating in ternary systems”, Journal of Computational Electronics, vol. 19, no.3, pp. 1175-1186, 2020.

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[20] M. Ahmadinejad and M. H. Moaiyeri, “Energy-efficient magnetic 5: 2 compressors based on SHE-assisted hybrid MTJ/FinFET logic”, Journal of Computational Electronics, vol. 19, no. 1, pp. 206-221, 2020.

[21] E. Deng, Y. Zhang, J.-O. Klein, D. Ravelsona, C. Chappert, and W. Zhao, “Low power magnetic full-adder based on spin transfer torque MRAM”, IEEE transactions on magnetics, vol. 49, no. 9, pp. 4982-4987, 2013.

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