مدل سازی تحلیلی ترانزیستورهای موبیلیتی بالای AlGaN/GaN با لایه p در سد

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[20] G. Xie, E. Xu, J. Lee, N. Hashemi, B. Zhang, F.Y. Fu, W.T. Ng, “Breakdown-voltage-enhancement technique for RF-based AlGaN/GaN HEMTs with a source-connected air-bridge field plate”, IEEE electron device letters, vol. 33, no.5, pp. 670-672, 2012.

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[32] Y. Liu, Q. Yu, J. Du, “Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications”, Journal of Computational Electronics, vol. 19, pp. 1527-1537, 2020.

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